Invention Grant
- Patent Title: Self-assembly process for memory array
- Patent Title (中): 内存阵列的自组装过程
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Application No.: US12285220Application Date: 2008-09-30
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Publication No.: US08008213B2Publication Date: 2011-08-30
- Inventor: Li Xiao , Jingyan Zhang , Huicai Zhong
- Applicant: Li Xiao , Jingyan Zhang , Huicai Zhong
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469

Abstract:
A method of making a device includes forming at least one anodizable metal layer over at least one of an electrode or a semiconductor device, forming a plurality of pores in the anodizable metal layer by anodization of the anodizable metal layer to expose a portion of the electrode or semiconductor device, and filling at least one pore with a rewritable material such that at least some of the rewritable material is in electrical contact with the electrode or semiconductor device.
Public/Granted literature
- US20100078618A1 Self-assembly process for memory array Public/Granted day:2010-04-01
Information query
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