Invention Grant
- Patent Title: Thermoelectric composite semiconductor
- Patent Title (中): 热电复合半导体
-
Application No.: US12930464Application Date: 2011-01-07
-
Publication No.: US08008571B2Publication Date: 2011-08-30
- Inventor: John H. Li
- Applicant: John H. Li
- Agent Clifford A. Poff; Suzanne Kikel
- Main IPC: H01L35/04
- IPC: H01L35/04

Abstract:
Heat transfer to refrigerate or heat uses a thermoelectric semiconductor structure including a P-type composite of dices of semiconductor material alloyed with P-type material forming spaced collector regions at junctions with a P-type conductive material for flux of electrical current and a N-type composite of dices of semiconductor material alloyed with N-type material forming spaced collector regions at junctions with a N-type conductive material for flux of electrical current. The thickness of each the dices is sufficient to form a PN junction. Electrically conductive buss bars form an electrical circuit between the dices of N-type conductivity and the dices of P-type conductivity. An electrically conductive buss bar forms an electrical circuit connection between the dices of N-type conductivity and the dices of P-type conductivity. An electrical potential is applied by terminals between the P-type composite and the N-type composite to induce a flux of heat concurrent with the flux of electrical current.
Public/Granted literature
- US20110100407A1 Thermoelectric composite semiconductor Public/Granted day:2011-05-05
Information query
IPC分类: