Invention Grant
US08008571B2 Thermoelectric composite semiconductor 失效
热电复合半导体

  • Patent Title: Thermoelectric composite semiconductor
  • Patent Title (中): 热电复合半导体
  • Application No.: US12930464
    Application Date: 2011-01-07
  • Publication No.: US08008571B2
    Publication Date: 2011-08-30
  • Inventor: John H. Li
  • Applicant: John H. Li
  • Agent Clifford A. Poff; Suzanne Kikel
  • Main IPC: H01L35/04
  • IPC: H01L35/04
Thermoelectric composite semiconductor
Abstract:
Heat transfer to refrigerate or heat uses a thermoelectric semiconductor structure including a P-type composite of dices of semiconductor material alloyed with P-type material forming spaced collector regions at junctions with a P-type conductive material for flux of electrical current and a N-type composite of dices of semiconductor material alloyed with N-type material forming spaced collector regions at junctions with a N-type conductive material for flux of electrical current. The thickness of each the dices is sufficient to form a PN junction. Electrically conductive buss bars form an electrical circuit between the dices of N-type conductivity and the dices of P-type conductivity. An electrically conductive buss bar forms an electrical circuit connection between the dices of N-type conductivity and the dices of P-type conductivity. An electrical potential is applied by terminals between the P-type composite and the N-type composite to induce a flux of heat concurrent with the flux of electrical current.
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