Invention Grant
- Patent Title: Two-zone ion beam carbon deposition
- Patent Title (中): 双区离子束碳沉积
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Application No.: US12179234Application Date: 2008-07-24
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Publication No.: US08008632B2Publication Date: 2011-08-30
- Inventor: Paul Stephen Mcleod , Kueir-Weei Chour
- Applicant: Paul Stephen Mcleod , Kueir-Weei Chour
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Foley & Lardner LLP
- Main IPC: H01J27/00
- IPC: H01J27/00 ; H01T23/00
Abstract:
The invention relates an ion source for ion beam deposition comprising multiple anodes, wherein the ion source deposits multiple zones of a source material and thicknesses of at least two of the multiple zones are different.
Public/Granted literature
- US20100019168A1 TWO-ZONE ION BEAM CARBON DEPOSITION Public/Granted day:2010-01-28
Information query
