Invention Grant
US08008650B2 Transistor with nanotube structure exhibiting N-type semiconductor-like characteristics
有权
具有纳米管结构的晶体管显示N型半导体样特性
- Patent Title: Transistor with nanotube structure exhibiting N-type semiconductor-like characteristics
- Patent Title (中): 具有纳米管结构的晶体管显示N型半导体样特性
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Application No.: US12955972Application Date: 2010-11-30
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Publication No.: US08008650B2Publication Date: 2011-08-30
- Inventor: Kazuhiko Matsumoto , Atsuhiko Kojima , Satoru Nagao
- Applicant: Kazuhiko Matsumoto , Atsuhiko Kojima , Satoru Nagao
- Applicant Address: JP Kawaguchi-shi
- Assignee: Japan Science and Technology Agency
- Current Assignee: Japan Science and Technology Agency
- Current Assignee Address: JP Kawaguchi-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-034476 20050210
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties. To realize this, a film of a nitrogenous compound 6 is formed directly on a channel 5 of a transistor 1 comprising a source electrode 2, a drain electrode 3, a gate electrode 4 and the n-type channel 5 having a nanotube-shaped structure and provided between the source electrode 2 and the drain electrode 3.
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