Invention Grant
- Patent Title: Light-emitting diode with increased light extraction
- Patent Title (中): 发光二极管具有增加的光提取
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Application No.: US12173662Application Date: 2008-07-15
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Publication No.: US08008678B2Publication Date: 2011-08-30
- Inventor: Chuong Anh Tran , Trung Tri Doan
- Applicant: Chuong Anh Tran , Trung Tri Doan
- Applicant Address: US CA Milpitas
- Assignee: Semileds Corporation
- Current Assignee: Semileds Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
Methods are disclosed for forming a vertical semiconductor light-emitting diode (VLED) device having an active layer between an n-doped layer and a p-doped layer; and securing a plurality of balls on a surface of the n-doped layer of the VLED device.
Public/Granted literature
- US20090014743A1 METHOD OF MAKING A LIGHT-EMITTING DIODE Public/Granted day:2009-01-15
Information query
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