Invention Grant
- Patent Title: Alumina substrate and method of making an alumina substrate
- Patent Title (中): 氧化铝基板和制造氧化铝基板的方法
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Application No.: US12062637Application Date: 2008-04-04
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Publication No.: US08008682B2Publication Date: 2011-08-30
- Inventor: Been Yu Liaw , Ming Lu
- Applicant: Been Yu Liaw , Ming Lu
- Applicant Address: CN Hong Kong, Hong Kong
- Assignee: Hong Kong Applied Science and Technology Research Institute Co. Ltd.
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Co. Ltd.
- Current Assignee Address: CN Hong Kong, Hong Kong
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
An alumina substrate and method of making an alumina substrate using oxidation is provided. Generally, photoresist masks are used to protect selected areas of an aluminum layer. The unprotected or exposed areas of the aluminum layer are then oxidized during a photolithography process. The protected, unexposed areas of the aluminum layer retain their conductive properties while the oxidized areas are converted to alumina, or aluminum oxide, which is non-conductive. Accordingly, an alumina substrate having conductive areas of aluminum is formed. In one embodiment, the alumina substrate includes an alumina layer, one or more aluminum vias formed within the alumina layer, each of the one or more aluminum vias extending between the bottom of the alumina layer and the top of the alumina layer, wherein the one or more aluminum vias are integrally formed within the alumina layer.
Public/Granted literature
- US20090252950A1 ALUMINA SUBSTRATE AND METHOD OF MAKING AN ALUMINA SUBSTRATE Public/Granted day:2009-10-08
Information query
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