Invention Grant
- Patent Title: Photodiode and method of fabrication
- Patent Title (中): 光电二极管和制造方法
-
Application No.: US12060342Application Date: 2008-04-01
-
Publication No.: US08008688B2Publication Date: 2011-08-30
- Inventor: Syn-Yem Hu
- Applicant: Syn-Yem Hu
- Applicant Address: US CA Milpitas
- Assignee: JDS Uniphase Corporation
- Current Assignee: JDS Uniphase Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Pequignot + Myers LLC
- Agent Matthew A. Pequignot
- Main IPC: H01L31/07
- IPC: H01L31/07

Abstract:
The present invention provides a highly reliable photodiode, as well as a simple method of fabricating such a photodiode. During fabrication of the photodiode, a grading layer is epitaxially grown on a top surface of an absorption layer, and a blocking layer, for inhibiting current flow, is epitaxially grown on a top surface of the grading layer. The blocking layer is then etched to expose a window region of the top surface of the grading layer. Thus, the etched blocking layer defines an active region of the absorption layer. A window layer is epitaxially regrown on a top surface of the blocking layer and on the window region of the top surface of the grading layer, and is then etched to form a window mesa.
Public/Granted literature
- US20090242934A1 Photodiode And Method Of Fabrication Public/Granted day:2009-10-01
Information query
IPC分类: