Invention Grant
US08008707B2 Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
有权
在存储单元中设置有电荷存储层的非易失性半导体存储器件
- Patent Title: Nonvolatile semiconductor memory device provided with charge storage layer in memory cell
- Patent Title (中): 在存储单元中设置有电荷存储层的非易失性半导体存储器件
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Application No.: US12333983Application Date: 2008-12-12
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Publication No.: US08008707B2Publication Date: 2011-08-30
- Inventor: Kazuhiro Matsuo , Masayuki Tanaka , Takeo Furuhata , Koji Nakahara
- Applicant: Kazuhiro Matsuo , Masayuki Tanaka , Takeo Furuhata , Koji Nakahara
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-323317 20071214; JP2008-008301 20080117; JP2008-127125 20080514; JP2008-136568 20080526
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film formed above the charge storage layer, a silicon nitride film formed on the first silicon oxide film, a metal oxide film formed on the silicon nitride film, and a nitride film formed on the metal oxide film. The metal oxide film has a relative permittivity of not less than 7.
Public/Granted literature
- US20090152618A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-06-18
Information query
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