Invention Grant
US08008708B2 Metal line of semiconductor device having a diffusion barrier and method for forming the same
失效
具有扩散阻挡层的半导体器件的金属线及其形成方法
- Patent Title: Metal line of semiconductor device having a diffusion barrier and method for forming the same
- Patent Title (中): 具有扩散阻挡层的半导体器件的金属线及其形成方法
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Application No.: US12486124Application Date: 2009-06-17
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Publication No.: US08008708B2Publication Date: 2011-08-30
- Inventor: Nam Yeal Lee , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Joon Seok Oh
- Applicant: Nam Yeal Lee , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Joon Seok Oh
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0085392 20080829
- Main IPC: H01L29/788
- IPC: H01L29/788
Abstract:
An insulation layer is formed on a semiconductor substrate so as to define a metal line forming region. A diffusion barrier having a multi-layered structure of an Mox1Si1-x1 layer, an Mox2Siy2Nz2 layer, and an Moy3N1-y3 layer is formed on a surface of the metal line forming region. A metal layer is formed on the diffusion barrier so as to fill the metal line forming region of the insulation layer.
Public/Granted literature
- US20100052169A1 METAL LINE OF SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER AND METHOD FOR FORMING THE SAME Public/Granted day:2010-03-04
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