Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12498774Application Date: 2009-07-07
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Publication No.: US08008717B2Publication Date: 2011-08-30
- Inventor: Yoshiya Kawashima
- Applicant: Yoshiya Kawashima
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2008-177269 20080707
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device of the present invention has a first-conductivity-type substrate having second-conductivity-type base regions exposed to a first surface thereof; trench gates provided to a first surface of the substrate; first-conductivity-type source regions formed shallower than the base regions; a plurality of second-conductivity-type column regions located between two adjacent trench gates in a plan view, while being spaced from each other in a second direction normal to the first direction; the center of each column region and the center of each base contact region fall on the center line between two trench gates; and has no column region formed below the trench gates.
Public/Granted literature
- US20100001341A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-01-07
Information query
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