Invention Grant
- Patent Title: Semiconductor device, and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12502008Application Date: 2009-07-13
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Publication No.: US08008730B2Publication Date: 2011-08-30
- Inventor: Shoichi Fukui , Noboru Morimoto , Yasutaka Nishioka , Junko Izumitani , Atsushi Ishii
- Applicant: Shoichi Fukui , Noboru Morimoto , Yasutaka Nishioka , Junko Izumitani , Atsushi Ishii
- Applicant Address: JP Osaka
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-217049 20080826
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
To provide a manufacturing method of a semiconductor device which can improve the reliability of the semiconductor device. A first insulating film for covering a semiconductor element formed in a semiconductor substrate is formed by a thermal CVD method or the like which has a good embedding property. A second insulating film is formed to cover the first insulating film by a plasma CVD method which has excellent humidity resistance. A plug is formed to penetrate the first insulating film and the second insulating film. A third insulating film comprised of a low-k film having a relatively low dielectric constant is formed over the second insulating film. A wiring is formed in the third insulating film by a damascene technique to be electrically coupled to the plug.
Public/Granted literature
- US20100052062A1 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-03-04
Information query
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