Invention Grant
- Patent Title: Semiconductor device having a power cutoff transistor
- Patent Title (中): 具有功率截止晶体管的半导体器件
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Application No.: US12453503Application Date: 2009-05-13
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Publication No.: US08008733B2Publication Date: 2011-08-30
- Inventor: Masakatsu Nakai
- Applicant: Masakatsu Nakai
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2008-153083 20080611
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
Disclosed herein is a semiconductor device having a power cutoff transistor including a semiconductor substrate of a first conductivity type; and first and second wells of the first conductivity type formed to be spaced from each other in the semiconductor substrate.
Public/Granted literature
- US20090309170A1 Semiconductor device having a power cutoff transistor Public/Granted day:2009-12-17
Information query
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