Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12482761Application Date: 2009-06-11
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Publication No.: US08008737B2Publication Date: 2011-08-30
- Inventor: Konami Izumi , Mayumi Yamaguchi
- Applicant: Konami Izumi , Mayumi Yamaguchi
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2005-156472 20050527
- Main IPC: H01L29/82
- IPC: H01L29/82

Abstract:
A micromachine includes a microstructure and a semiconductor element formed over one insulating substrate. The micromachine includes including a movable layer containing polycrystalline silicon and a space below or above the layer. Such polycrystalline silicon is formed on an insulating surface, so that it is used as a microstructure and used for forming a semiconductor element. Accordingly, a semiconductor device may include a microstructure and a semiconductor element provided over one insulating substrate.
Public/Granted literature
- US20090242896A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-10-01
Information query
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