Invention Grant
- Patent Title: Low resistance tunneling magnetoresistive sensor with composite inner pinned layer
- Patent Title (中): 低电阻隧道磁阻传感器，具有复合内固定层
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Application No.: US12586523Application Date: 2009-09-23
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Publication No.: US08008740B2Publication Date: 2011-08-30
- Inventor: Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Yu-Hsia Chen , Min Li
- Applicant: Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Yu-Hsia Chen , Min Li
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman
- Main IPC: H01L43/00
- IPC: H01L43/00
Abstract:
A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2/Ru/AP1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling layer, a and 5 to 50 Angstrom thick Fe or Fe alloy layer on the CoFeB or CoFeB alloy, and a 5 to 30 Angstrom thick Co or Co rich alloy layer formed on the Fe or Fe alloy. A MR ratio of about 48% with a RA of
Public/Granted literature
- US20100019333A1 Low resistance tunneling magnetoresistive sensor with composite inner pinned layer Public/Granted day:2010-01-28
Information query
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