Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11950716Application Date: 2007-12-05
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Publication No.: US08008751B2Publication Date: 2011-08-30
- Inventor: Toshifumi Irisawa , Shinichi Takagi , Naoharu Sugiyama
- Applicant: Toshifumi Irisawa , Shinichi Takagi , Naoharu Sugiyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- Priority: JP2006-332020 20061208
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A semiconductor device includes an insulator layer, and an n-channel MIS transistor having an n channel and a pMIS transistor having a p channel which are formed on the insulator layer, wherein the n channel of the n-channel MIS transistor is formed of an Si layer having a uniaxial tensile strain in a channel length direction, the p channel of the p-channel MIS transistor is formed of an SiGe or Ge layer having a uniaxial compressive strain in the channel length direction, and the channel length direction of each of the n-channel MIS transistor and the p-channel MIS transistor is a direction.
Public/Granted literature
- US20080135886A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2008-06-12
Information query
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