Invention Grant
- Patent Title: Integrated semiconductor device
- Patent Title (中): 集成半导体器件
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Application No.: US12370927Application Date: 2009-02-13
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Publication No.: US08008760B2Publication Date: 2011-08-30
- Inventor: Hiroshi Yamada , Kazuhiko Itaya , Yutaka Onozuka , Hideyuki Funaki
- Applicant: Hiroshi Yamada , Kazuhiko Itaya , Yutaka Onozuka , Hideyuki Funaki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-032594 20080214
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
An integrated semiconductor device includes a plurality of semiconductor elements having different integrated element circuits or different sizes; an insulating material arranged between the semiconductor elements; an organic insulating film arranged entirely on the semiconductor elements and the insulating material; a fine thin-layer wiring that arranged on the organic insulating film and connects the semiconductor elements; a first input/output electrode arranged on an area of the insulating material; and a first bump electrode formed on the first input/output electrode.
Public/Granted literature
- US20090206444A1 INTEGRATED SEMICONDUCTOR DEVICE Public/Granted day:2009-08-20
Information query
IPC分类:
