Invention Grant
US08008774B2 Multi-layer metal wiring of semiconductor device preventing mutual metal diffusion between metal wirings and method for forming the same
失效
用于防止金属布线之间的金属间扩散的半导体装置的多层金属布线及其形成方法
- Patent Title: Multi-layer metal wiring of semiconductor device preventing mutual metal diffusion between metal wirings and method for forming the same
- Patent Title (中): 用于防止金属布线之间的金属间扩散的半导体装置的多层金属布线及其形成方法
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Application No.: US12754776Application Date: 2010-04-06
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Publication No.: US08008774B2Publication Date: 2011-08-30
- Inventor: Soo Hyun Kim , Baek Mann Kim , Young Jin Lee , Dong Ha Jung , Jeong Tae Kim
- Applicant: Soo Hyun Kim , Baek Mann Kim , Young Jin Lee , Dong Ha Jung , Jeong Tae Kim
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2006-0137204 20061228
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768
Abstract:
A multi-layer metal wiring of a semiconductor device and a method for forming the same are disclosed. The multi-layer metal wiring of the semiconductor device includes a lower Cu wiring, and an upper Al wiring formed to be contacted with the lower Cu wiring, and a diffusion barrier layer interposed between the lower Cu wiring and the upper Al wiring. The diffusion barrier layer is formed of a W-based layer.
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