Invention Grant
- Patent Title: Post passivation interconnection structures
- Patent Title (中): 后钝化互连结构
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Application No.: US11017169Application Date: 2004-12-20
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Publication No.: US08008775B2Publication Date: 2011-08-30
- Inventor: Mou-Shiung Lin , Chiu-Ming Chou , Chien-Kang Chou
- Applicant: Mou-Shiung Lin , Chiu-Ming Chou , Chien-Kang Chou
- Applicant Address: TW Hsinchu
- Assignee: Megica Corporation
- Current Assignee: Megica Corporation
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A system and method for forming post passivation metal structures is described. Metal interconnections and high quality electrical components, such as inductors, transformers, capacitors, or resistors are formed on a layer of passivation, or on a thick layer of polymer over a passivation layer.
Public/Granted literature
- US20060049525A1 Post passivation interconnection process and structures Public/Granted day:2006-03-09
Information query
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