Invention Grant
- Patent Title: Multiple element electrode cMUT devices and fabrication methods
- Patent Title (中): 多元件电极cMUT器件及其制造方法
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Application No.: US11068005Application Date: 2005-02-28
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Publication No.: US08008835B2Publication Date: 2011-08-30
- Inventor: F. Levent Degertekin
- Applicant: F. Levent Degertekin
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Troutman Sanders LLP
- Agent Robert R. Elliott, Jr.
- Main IPC: H02N1/08
- IPC: H02N1/08

Abstract:
Multiple electrode element capacitive micromachined ultrasonic transducer (“cMUT”) devices and fabrication methods are provided. A cMUT device generally comprises a top electrode disposed within a membrane, a bottom electrode disposed on a substrate, and a cavity between the membrane and the bottom electrode. In a preferred embodiment of the present invention, at least one of the first electrode and the second electrode comprises a plurality of electrode elements. The electrode elements can be positioned and energized to shape the membrane and efficiently transmit and receive ultrasonic energy, such as ultrasonic waves. Other embodiments are also claimed and described.
Public/Granted literature
- US20050200241A1 Multiple element electrode cMUT devices and fabrication methods Public/Granted day:2005-09-15
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