Invention Grant
- Patent Title: Amplifier for amplifying a high-frequency signal
- Patent Title (中): 用于放大高频信号的放大器
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Application No.: US12719253Application Date: 2010-03-08
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Publication No.: US08008973B2Publication Date: 2011-08-30
- Inventor: Ryuichi Fujimoto
- Applicant: Ryuichi Fujimoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2009-217599 20090918
- Main IPC: H03G3/12
- IPC: H03G3/12
Abstract:
A transistor is provided to amplify a high frequency signal. A gate/base of the transistor receives the high frequency input signal. A variable capacitor is connected between the gate and a source/between the base and an emitter of the transistor. A variable inductor is connected with the source/the emitter of the transistor.
Public/Granted literature
- US20110068871A1 AMPLIFIER FOR AMPLIFYING A HIGH-FREQUENCY SIGNAL Public/Granted day:2011-03-24
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