Invention Grant
- Patent Title: Optimal rasterization for maskless lithography
- Patent Title (中): 无掩模光刻的最佳光栅化
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Application No.: US11686136Application Date: 2007-03-14
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Publication No.: US08009269B2Publication Date: 2011-08-30
- Inventor: Kars Zeger Troost , Jason Douglas Hintersteiner , Minne Cuperus , Kamen Hristov Chilov , Richard Carl Zimmerman , Ronnie Florentius Van T Westeinde
- Applicant: Kars Zeger Troost , Jason Douglas Hintersteiner , Minne Cuperus , Kamen Hristov Chilov , Richard Carl Zimmerman , Ronnie Florentius Van T Westeinde
- Applicant Address: NL Veldhoven NL Veldhoven
- Assignee: ASML Holding N.V.,ASML Netherlands B.V.
- Current Assignee: ASML Holding N.V.,ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Main IPC: G03B27/42
- IPC: G03B27/42
Abstract:
A lithographic system is provided in which an extent of overlap between pattern sections is adjusted in order to match a size of a pattern section to a size of a repeating portion of the pattern to be formed.
Public/Granted literature
- US20080224251A1 Optimal Rasterization for Maskless Lithography Public/Granted day:2008-09-18
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