Invention Grant
US08009392B2 Thin film magnetic head and magnetic disk device 有权
薄膜磁头和磁盘装置

Thin film magnetic head and magnetic disk device
Abstract:
Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.
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