Invention Grant
- Patent Title: Resistance random access memory device and a method of manufacturing the same
- Patent Title (中): 电阻随机存取存储器件及其制造方法
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Application No.: US11654003Application Date: 2007-01-17
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Publication No.: US08009454B2Publication Date: 2011-08-30
- Inventor: Myoung-jae Lee , Yoon-dong Park , Hyun-sang Hwang , Dong-soo Lee
- Applicant: Myoung-jae Lee , Yoon-dong Park , Hyun-sang Hwang , Dong-soo Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0022728 20060310
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Provided is a resistance random access memory (RRAM) device and a method of manufacturing the same. A resistance random access memory (RRAM) device may include a lower electrode, a first oxide layer on the lower electrode and storing information using two resistance states, a current control layer made of a second oxide on the first oxide layer and an upper electrode on the current control layer.
Public/Granted literature
- US20070215977A1 Resistance random access memory device and a method of manufacturing the same Public/Granted day:2007-09-20
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