Invention Grant
- Patent Title: Programmable resistance memory
- Patent Title (中): 可编程电阻记忆
-
Application No.: US12321223Application Date: 2009-01-20
-
Publication No.: US08009455B2Publication Date: 2011-08-30
- Inventor: Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
- Applicant: Tyler Lowrey , Carl Schell , Wally Czubatyj , Steve Hudgens , Jon Maimon , Jeff Fournier , Mike Hennessey , Ed Spall
- Applicant Address: US MI Troy
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Troy
- Agent Kevin L. Bray
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
Public/Granted literature
- US20100182825A1 Programmable resistance memory Public/Granted day:2010-07-22
Information query
