Invention Grant
US08009461B2 SRAM device, and SRAM device design structure, with adaptable access transistors
有权
SRAM器件和SRAM器件设计结构，具有适应性的存取晶体管
- Patent Title: SRAM device, and SRAM device design structure, with adaptable access transistors
- Patent Title (中): SRAM器件和SRAM器件设计结构，具有适应性的存取晶体管
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Application No.: US11969981Application Date: 2008-01-07
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Publication No.: US08009461B2Publication Date: 2011-08-30
- Inventor: Xu Ouyang , Louis C. Hsu
- Applicant: Xu Ouyang , Louis C. Hsu
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Joseph P. Abate, Esq.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A semiconductor device includes a SRAM having a pair of MCSFETs connected as access transistors (pass gates). A design structure embodied or stored in a machine readable medium includes a SRAM having two MCSFETs connected as access transistors.
Public/Granted literature
- US20090175068A1 SRAM DEVICE, AND SRAM DEVICE DESIGN STRUCTURE, WITH ADAPTABLE ACCESS TRANSISTORS Public/Granted day:2009-07-09
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