An MRAM according to the present invention has: a memory cell array; a first word line and a second word line each connected to a group of memory cells arranged in a first direction; a plurality of blocks arranged in a matrix form; a common word line connected to a group of blocks arranged in the first direction; and a bit line pair connected to a group of blocks arranged in a second direction. Each block has a plurality of memory cells, and each memory cell has a first transistor and a magnetoresistance element. Each block further has a second transistor to which the plurality of memory cells are connected in parallel. A gate of the second transistor is connected to the common word line. A gate of the first transistor is connected to the first word line. One of source/drain of the first transistor is connected to the first bit line, and the other thereof is connected to one end of the magnetoresistance element and connected to the second bit line through the second transistor. The other end of the magnetoresistance element is connected to the second word line.