Invention Grant
US08009469B2 Multiple level cell memory device with single bit per cell, re-mappable memory block
有权
具有单个单个位的多级单元存储器件，可重新映射的存储器块
- Patent Title: Multiple level cell memory device with single bit per cell, re-mappable memory block
- Patent Title (中): 具有单个单个位的多级单元存储器件，可重新映射的存储器块
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Application No.: US12240280Application Date: 2008-09-29
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Publication No.: US08009469B2Publication Date: 2011-08-30
- Inventor: Frankie F. Roohparvar
- Applicant: Frankie F. Roohparvar
- Applicant Address: US NY Mt. Kisco
- Assignee: Round Rock Research, LLC
- Current Assignee: Round Rock Research, LLC
- Current Assignee Address: US NY Mt. Kisco
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A non-volatile memory device has a plurality of memory cells that are organized into memory blocks. Each block can operate in either a multiple level cell mode or a single bit per cell mode. One dedicated memory block is capable of operating only in the single bit per cell mode. If the dedicated memory block is found to be defective, a defect-free block can be remapped to that dedicated memory block location to act only in the single bit per cell mode.
Public/Granted literature
- US20090027962A1 MULTIPLE LEVEL CELL MEMORY DEVICE WITH SINGLE BIT PER CELL, RE-MAPPABLE MEMORY BLOCK Public/Granted day:2009-01-29
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