Invention Grant
- Patent Title: Memory formed by using defects
- Patent Title (中): 通过使用缺陷形成的记忆
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Application No.: US12617516Application Date: 2009-11-12
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Publication No.: US08009479B2Publication Date: 2011-08-30
- Inventor: Yen-Ting Chen , Ching-Fang Huang , Hung-Chang Sun , Chee Wee Liu
- Applicant: Yen-Ting Chen , Ching-Fang Huang , Hung-Chang Sun , Chee Wee Liu
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Priority: TW98126643A 20090806
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A non-volatile memory is provided. The non-volatile memory comprises at least a silicon-on-insulator transistor including a substrate; an insulating layer disposed on the substrate; an active region disposed on the insulating layer; and an energy barrier device disposed in the active region and outputting a relatively small current when the non-volatile memory is read.
Public/Granted literature
- US20110032765A1 Memory Formed By Using Defects Public/Granted day:2011-02-10
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