Invention Grant
- Patent Title: Nonvolatile semiconductor memory system
- Patent Title (中): 非易失性半导体存储器系统
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Application No.: US12630220Application Date: 2009-12-03
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Publication No.: US08009480B2Publication Date: 2011-08-30
- Inventor: Naofumi Abiko , Takuya Futatsuyama
- Applicant: Naofumi Abiko , Takuya Futatsuyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-094922 20070330
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
According to an embodiment, a nonvolatile semiconductor memory system includes: a nonvolatile semiconductor memory; and a memory controller having: a memory interface unit that inputs commands to the nonvolatile semiconductor memory and inputs or outputs data between the nonvolatile semiconductor memory; a memory that stores writing information indicating a memory cell transistor that is written the latest in each of the NAND cell units; and a processor that sets a read voltage based on the writing information to read out data from the memory cell transistors connected to a first word line; wherein a row controller is configured to set a plurality of levels of the read voltage to be applied to the first word line, with respect to one threshold for discriminating data stored in a memory cell transistors.
Public/Granted literature
- US20100080061A1 NONVOLATILE SEMICONDUCTOR MEMORY SYSTEM Public/Granted day:2010-04-01
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