Invention Grant
- Patent Title: Memories with front end precharge
- Patent Title (中): 记忆与前端预充电
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Application No.: US12767517Application Date: 2010-04-26
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Publication No.: US08009495B2Publication Date: 2011-08-30
- Inventor: G. R. Mohan Rao
- Applicant: G. R. Mohan Rao
- Applicant Address: US DE Wilmington
- Assignee: S. Aqua Semiconductor, LLC
- Current Assignee: S. Aqua Semiconductor, LLC
- Current Assignee Address: US DE Wilmington
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Methods, apparatuses and systems of operating digital memory where the digital memory device including a plurality of memory cells receives a command to perform an operation on a set of memory cells, where the set of memory cells contains fewer memory cells than the device as a whole and where the device performs the operation including selectively precharging on the front end of the operation, in response to the received command, only a set of bit lines associated with the set of memory cells.
Public/Granted literature
- US20100202230A1 MEMORIES WITH FRONT END PRECHARGE Public/Granted day:2010-08-12
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