Invention Grant
- Patent Title: Three-dimensional photonic crystal and its manufacturing method thereof
- Patent Title (中): 三维光子晶体及其制造方法
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Application No.: US11885546Application Date: 2006-03-03
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Publication No.: US08009953B2Publication Date: 2011-08-30
- Inventor: Susumu Noda , Makoto Okano , Masahiro Imada , Shigeki Takahashi
- Applicant: Susumu Noda , Makoto Okano , Masahiro Imada , Shigeki Takahashi
- Applicant Address: JP Kyoto
- Assignee: Kyoto University
- Current Assignee: Kyoto University
- Current Assignee Address: JP Kyoto
- Agency: Oliff & Berridge, PLC
- Priority: JP2005-106729 20050305
- International Application: PCT/JP2006/304093 WO 20060303
- International Announcement: WO2006/095648 WO 20060914
- Main IPC: G02B6/10
- IPC: G02B6/10

Abstract:
An object of the present invention is to provide a three-dimensional photonic crystal which allows an internal formation of a defect structure with an arbitrary shape and size. Multiple holes extending to two different directions are formed obliquely to a base body surface in order to form a first crystal and a second crystal. Base body left between the holes are made to be rods. Moreover, a connection crystal layer is formed by a part of rods having a size different from that of the rods in the first crystal and the second crystal. The connection crystal layer is held between the first crystal and the second crystal and they are fused. In a three-dimensional photonic crystal thus obtained, the rod becomes a point defect. The shape and size of the point defect can be arbitrarily set in any directions within the connection crystal layer. The shape and size of the point defect can also be controlled by adjusting the thickness of the connection crystal layer.
Public/Granted literature
- US20080131660A1 Three-Dimensional Photonic Crystal and its Manufacturing Method Thereof Public/Granted day:2008-06-05
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