Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US11885589Application Date: 2006-03-16
-
Publication No.: US08010045B2Publication Date: 2011-08-30
- Inventor: Kiyoshi Kato
- Applicant: Kiyoshi Kato
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-088027 20050325
- International Application: PCT/JP2006/305755 WO 20060316
- International Announcement: WO2006/103997 WO 20061005
- Main IPC: H04B5/00
- IPC: H04B5/00 ; H04B1/06 ; H04B7/00 ; H04B1/16 ; H04M1/00

Abstract:
A semiconductor device having an antenna, an asynchronous counter, and a circuit is provided. The antenna converts a carrier wave into an electrical signal. The asynchronous counter has a plurality of flip-flop circuits, each of which has a plurality of thin film transistors. Alternatively, each of the plurality of flip-flop circuits has a plurality of transistors each including a channel portion formed of single crystal silicon. The circuit generates a power supply voltage using the electrical signal and supplies the generated power supply voltage to the asynchronous counter.
Public/Granted literature
- US20080137780A1 Semiconductor Device Public/Granted day:2008-06-12
Information query