Invention Grant
- Patent Title: Process monitoring apparatus and method for monitoring process
- Patent Title (中): 过程监控设备及监控过程方法
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Application No.: US11819928Application Date: 2007-06-29
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Publication No.: US08010228B2Publication Date: 2011-08-30
- Inventor: Mitsuhiro Yuasa
- Applicant: Mitsuhiro Yuasa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2002-318116 20021031
- Main IPC: G06F7/66
- IPC: G06F7/66

Abstract:
A sensor on a semiconductor wafer is used as a process monitor and a capacitor is employed as a power supply for the sensor. The capacitor can be formed by stacking a poly-silicon layer and a silicon nitride layer on the wafer. A timer can be used to specify an operation time or an operation timing, etc. Furthermore, unauthorized use is prevented by storing a keyword in an ROM of the process monitor.
Public/Granted literature
- US20070254384A1 Process monitoring apparatus and method for monitoring process Public/Granted day:2007-11-01
Information query
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