Invention Grant
US08010736B2 Nonvolatile semiconductor memory device for supporting high speed search in cache memory
有权
用于在高速缓冲存储器中支持高速搜索的非易失性半导体存储器件
- Patent Title: Nonvolatile semiconductor memory device for supporting high speed search in cache memory
- Patent Title (中): 用于在高速缓冲存储器中支持高速搜索的非易失性半导体存储器件
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Application No.: US12029665Application Date: 2008-02-12
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Publication No.: US08010736B2Publication Date: 2011-08-30
- Inventor: Chan-Ik Park , Jin-Wook Lee , Byoung-Kook Lee
- Applicant: Chan-Ik Park , Jin-Wook Lee , Byoung-Kook Lee
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2007-0014716 20070213
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A method for reducing a memory map table search time when employing a semiconductor memory device as a temporary memory of large capacity storage device, and a semiconductor memory device therefore, are provided. A MAP RAM is prepared for storing map table data related to the nonvolatile memory area in the volatile memory area. At an initial power-up operation, it is determined whether a logical address is searched for from the map table data while the map table data existing in a map storage area of the nonvolatile memory area is loaded into the MAP RAM. A physical address corresponding to the logical address is provided as an output, when the logical address is searched for. Search time for a memory map table is reduced and read performance in a high speed map information search is increased.
Public/Granted literature
- US20080195803A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE FOR SUPPORTING HIGH SPEED SEARCH IN CACHE MEMORY Public/Granted day:2008-08-14
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