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US08010755B2 States encoding in multi-bit flash cells for optimizing error rate 有权
在多位闪存单元中进行编码以优化错误率

States encoding in multi-bit flash cells for optimizing error rate
Abstract:
To store N bits of M≧2 logical pages, the bits are interleaved and the interleaved bits are programmed to [N/M] memory cells, M bits per cell. Preferably, the interleaving puts the same number of bits from each logical page into each bit-page of the [N/M] cells. When the bits are read from the cells, the bits are de-interleaved. The interleaving may be deterministic or random, and may be effected by software or by dedicated hardware.
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