Invention Grant
- Patent Title: Caching device for NAND flash translation layer
- Patent Title (中): NAND闪存转换层缓存器
-
Application No.: US11841434Application Date: 2007-08-20
-
Publication No.: US08010770B2Publication Date: 2011-08-30
- Inventor: Chin-hsien Wu , Tei-wei Kuo , Hsiang-Chi Hsieh
- Applicant: Chin-hsien Wu , Tei-wei Kuo , Hsiang-Chi Hsieh
- Applicant Address: TW Taipei
- Assignee: Genesys Logic, Inc.
- Current Assignee: Genesys Logic, Inc.
- Current Assignee Address: TW Taipei
- Priority: TW95222905U 20061227
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28

Abstract:
A caching device is positioned between a memory read/write controller and a flash memory, which contains an instruction register, a logical address register, a data register, a pair of auxiliary controllers, a microprocessor, an address translation unit, a flash memory address register, a caching control unit, and a caching instruction and data buffer area. Among them, the microprocessor is the core of the caching device responsible not only for the reading and writing the flash memory but also for the caching operation for logical and physical address translation. The caching control unit is a programmable device containing the instruction and data for caching the logical and physical address mapping. The caching instruction and data buffer area temporarily stores the caching instruction and data used by the caching control unit.
Public/Granted literature
- US20080162792A1 CACHING DEVICE FOR NAND FLASH TRANSLATION LAYER Public/Granted day:2008-07-03
Information query