Invention Grant
US08011084B2 Method for fabricating narrow magnetic read width TMR/CPP sensors
有权
制造窄磁读宽TMR / CPP传感器的方法
- Patent Title: Method for fabricating narrow magnetic read width TMR/CPP sensors
- Patent Title (中): 制造窄磁读宽TMR / CPP传感器的方法
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Application No.: US12184054Application Date: 2008-07-31
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Publication No.: US08011084B2Publication Date: 2011-09-06
- Inventor: Quang Le , Jui-Lung Li
- Applicant: Quang Le , Jui-Lung Li
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/127
- IPC: G11B5/127 ; H04R31/00

Abstract:
A method for manufacturing a manufacturing a magnetoresistive sensor that allows the sensor to be constructed with a very narrow and well controlled track width. The method includes depositing a layer of diamond like carbon over a series of sensor layers. A first mask is then formed to define a sensor, and an ion milling is performed to remove sensor material not protected by the first mask. Then, a second mask is formed, and a hard bias layer is deposited to the thickness of the sensor layers. The second mask is then lifted off and a CMP is performed to remove the first mask structure. Because all areas other than the area directly over the sensor are substantially planar a quick, gentle CMP can be used to remove the first mask layer even if the first mask is small, such as for definition of a very narrow track-width sensor.
Public/Granted literature
- US20100024201A1 METHOD FOR FABRICATING NARROW MAGNETIC READ WIDTH TMR/CPP SENSORS Public/Granted day:2010-02-04
Information query
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