Invention Grant
- Patent Title: Methods for controllable doping of aluminum nitride bulk crystals
- Patent Title (中): 氮化铝体晶的可控掺杂方法
-
Application No.: US11731790Application Date: 2007-03-30
-
Publication No.: US08012257B2Publication Date: 2011-09-06
- Inventor: Kenneth E. Morgan , Leo J. Schowalter , Glen A. Slack
- Applicant: Kenneth E. Morgan , Leo J. Schowalter , Glen A. Slack
- Applicant Address: US NY Green Island
- Assignee: Crystal IS, Inc.
- Current Assignee: Crystal IS, Inc.
- Current Assignee Address: US NY Green Island
- Agency: Bingham McCutchen LLP
- Main IPC: C30B23/00
- IPC: C30B23/00
Abstract:
Fabrication of doped and undoped stoichiometric polycrystalline AlN ceramics with high purity is accomplished by, for example, reacting Al pellets with nitrogen gas. Such polycrystalline AlN ceramics may be utilized in the fabrication of high purity AlN single crystals, which may be annealed to enhance a conductivity thereof.
Public/Granted literature
- US20070243653A1 Methods for controllable doping of aluminum nitride bulk crystals Public/Granted day:2007-10-18
Information query
