Invention Grant
- Patent Title: Method of fabricating a release substrate
- Patent Title (中): 制造剥离基材的方法
-
Application No.: US12392888Application Date: 2009-02-25
-
Publication No.: US08012289B2Publication Date: 2011-09-06
- Inventor: Olivier Rayssac , Takeshi Akatsu
- Applicant: Olivier Rayssac , Pierre Rayssac, legal representative , Gisèle Rayssac, legal representative , Takeshi Akatsu
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0400694 20040126
- Main IPC: B44C1/17
- IPC: B44C1/17 ; B29C37/02 ; B29C35/02 ; B32B37/06 ; B32B37/02 ; B32B38/18 ; H01L21/322 ; H01L21/324 ; H01L21/304 ; B44C1/22 ; B32B37/16 ; B32B38/08 ; B32B38/10 ; H01L21/42

Abstract:
The invention relates to a method of fabricating a release substrate produced from semiconductor materials, the method comprising creating a reversible connection between two substrate release layers characterized in that the reversible connection is formed by a connecting layer produced using a first material as the basis, the connecting layer further comprising a nanoparticle concentrating zone of a second material disposed to facilitate release of the substrate, the first and second materials being selected to maintain the bonding energy of the reversible connection substantially constant even when the substrate is exposed to heat treatment.
Public/Granted literature
- US20090179299A1 METHOD OF FABRICATING A RELEASE SUBSTRATE Public/Granted day:2009-07-16
Information query
IPC分类: