Invention Grant
US08012319B2 Multi-chambered metal electrodeposition system for semiconductor substrates 有权
用于半导体衬底的多层金属电沉积系统

Multi-chambered metal electrodeposition system for semiconductor substrates
Abstract:
A multi-chambered system for electroplating metal layers on a semiconductor substrate. The system comprises a fluid reservoir having at least a first chamber and a second chamber. A cathode is located in the first chamber, an anode is located in the second chamber, and a shield is located between the cathode and anode. The cathode is configured to be electrically coupled to a semiconductor substrate locatable in the first chamber. The anode is configured to oppose a first major surface of the semiconductor substrate. The shield is configured to deter electrolytic fluid communication between the first and second chamber, other than through predefined openings in the shield.
Information query
Patent Agency Ranking
0/0