Invention Grant
- Patent Title: Multi-chambered metal electrodeposition system for semiconductor substrates
- Patent Title (中): 用于半导体衬底的多层金属电沉积系统
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Application No.: US11943644Application Date: 2007-11-21
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Publication No.: US08012319B2Publication Date: 2011-09-06
- Inventor: Nishath Yasmeen , Richard Aaron Ledesma
- Applicant: Nishath Yasmeen , Richard Aaron Ledesma
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John J. Patti; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: C25D17/00
- IPC: C25D17/00 ; C25D5/00

Abstract:
A multi-chambered system for electroplating metal layers on a semiconductor substrate. The system comprises a fluid reservoir having at least a first chamber and a second chamber. A cathode is located in the first chamber, an anode is located in the second chamber, and a shield is located between the cathode and anode. The cathode is configured to be electrically coupled to a semiconductor substrate locatable in the first chamber. The anode is configured to oppose a first major surface of the semiconductor substrate. The shield is configured to deter electrolytic fluid communication between the first and second chamber, other than through predefined openings in the shield.
Public/Granted literature
- US20090127122A1 MULTI-CHAMBERED METAL ELECTRODEPOSITION SYSTEM FOR SEMICONDUCTOR SUBSTRATES Public/Granted day:2009-05-21
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