Invention Grant
- Patent Title: Light emitting element and manufacturing method thereof
- Patent Title (中): 发光元件及其制造方法
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Application No.: US11779363Application Date: 2007-07-18
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Publication No.: US08012529B2Publication Date: 2011-09-06
- Inventor: Junichiro Sakata , Masakazu Murakami , Koji Moriya , Yoshiaki Oikawa , Taketomi Asami , Hisashi Ohtani
- Applicant: Junichiro Sakata , Masakazu Murakami , Koji Moriya , Yoshiaki Oikawa , Taketomi Asami , Hisashi Ohtani
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2003-308126 20030829
- Main IPC: B05D5/06
- IPC: B05D5/06 ; C23F1/00

Abstract:
According to the invention, an insulating or semi-insulating barrier layer which has a thickness where a tunnel current can flow through is provided between a hole injection electrode and an organic compound layer with hole transport characteristics (a hole injection layer or a hole transport layer). Specifically, a thin insulating or semi-insulating barrier layer which contains silicon or silicon oxide; silicon or silicon oxide and a light transmitting conductive oxide material; or silicon or silicon oxide, a light transmitting conductive oxide material, and carbon may be provided between a light transmitting conductive oxide film formed of a light transmitting conductive oxide material, such as ITO and a hole injection layer containing an organic compound.
Public/Granted literature
- US20070259466A1 Light Emitting Element and Manufacturing Method Thereof Public/Granted day:2007-11-08
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