Invention Grant
- Patent Title: Photoresist systems
- Patent Title (中): 光刻胶系统
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Application No.: US10412640Application Date: 2003-04-11
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Publication No.: US08012670B2Publication Date: 2011-09-06
- Inventor: Gary N. Taylor , Cheng-Bai Xu
- Applicant: Gary N. Taylor , Cheng-Bai Xu
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agency: The Dow Chemical Company
- Agent Peter F. Corless
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/11
Abstract:
New photoresist systems are provided that comprise an underlying processing (or barrier) layer composition and an overcoated photoresist layer. Systems of the invention can exhibit significant adhesion to SiON and other inorganic surface layers.
Public/Granted literature
- US20040029042A1 Photoresist systems Public/Granted day:2004-02-12
Information query
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