Invention Grant
- Patent Title: Substrate treating apparatus, substrate treating method, and method for manufacturing high-voltage device
- Patent Title (中): 基板处理装置,基板处理方法及制造高压装置的方法
-
Application No.: US12343642Application Date: 2008-12-24
-
Publication No.: US08012772B2Publication Date: 2011-09-06
- Inventor: Satoshi Koide , Yasushi Iseki , Akira Ishii
- Applicant: Satoshi Koide , Yasushi Iseki , Akira Ishii
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-332116 20071225
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23F1/02 ; H01J9/00 ; H01J9/44

Abstract:
A substrate treating apparatus, in which a voltage is applied to between a treatment electrode and a target substrate in such a state that the treatment electrode is opposed to the target substrate to thereby perform substrate treatment for removing undesired substances on the target substrate, has a reference electrode, a transfer unit which transfers at least one of the treatment electrode and the reference electrode to thereby provide the treatment electrode so that the treatment electrode is opposed to the reference electrode, and a check unit for applying a voltage to between the treatment electrode and the reference electrode in such a state that the treatment electrode is opposed to the reference electrode and thereby checking an adhesion level of undesired substances onto the treatment electrode surface.
Public/Granted literature
Information query
IPC分类: