Invention Grant
- Patent Title: Semiconductor element and method for manufacturing same
- Patent Title (中): 半导体元件及其制造方法
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Application No.: US11887439Application Date: 2006-04-04
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Publication No.: US08012783B2Publication Date: 2011-09-06
- Inventor: Tsuyoshi Takano , Takahide Joichi , Hiroaki Okagawa
- Applicant: Tsuyoshi Takano , Takahide Joichi , Hiroaki Okagawa
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Chemical Corporation
- Current Assignee: Mitsubishi Chemical Corporation
- Current Assignee Address: JP Tokyo
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2005-112610 20050408; JP2006-031741 20060208
- International Application: PCT/JP2006/307526 WO 20060404
- International Announcement: WO2006/109760 WO 20061019
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/28 ; H01L21/31 ; H01L29/22 ; H01L23/52 ; H01L23/48 ; H01L29/40 ; H01L23/485
Abstract:
The object of the present invention is to provide a semiconductor element containing an n-type gallium nitride based compound semiconductor and a novel electrode that makes an ohmic contact with the semiconductor.The semiconductor element of the present invention has an n-type Gallium nitride based compound semiconductor and an electrode that forms an ohmic contact with the semiconductor, wherein the electrode has a TiW alloy layer to be in contact with the semiconductor. According to a preferable embodiment, the above-mentioned electrode can also serve as a contact electrode. According to a preferable embodiment, the above-mentioned electrode is superior in the heat resistance. Moreover, a production method of the semiconductor element is also provided.
Public/Granted literature
- US20090065938A1 Semiconductor Element and Method for Manufacturing Same Public/Granted day:2009-03-12
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