Invention Grant
US08012784B2 Method for producing group III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device, and lamp
有权
III族氮化物半导体发光元件，III族氮化物半导体发光元件及灯的制造方法
- Patent Title: Method for producing group III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device, and lamp
- Patent Title (中): III族氮化物半导体发光元件，III族氮化物半导体发光元件及灯的制造方法
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Application No.: US12464522Application Date: 2009-05-12
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Publication No.: US08012784B2Publication Date: 2011-09-06
- Inventor: Hisayuki Miki , Yasunori Yokoyama , Takehiko Okabe , Kenzo Hanawa
- Applicant: Hisayuki Miki , Yasunori Yokoyama , Takehiko Okabe , Kenzo Hanawa
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-127733 20080514
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp.Provided is a method in which a buffer layer 12 composed of a group III nitride compound is laminated on a substrate 11 and then an n-type semiconductor layer 14 provided with an underlying layer 14a, a light emitting layer 15, and an p-type semiconductor layer 16 are sequentially laminated on the buffer layer 12, and is a method in which the buffer layer 12 is formed so as to have a composition of AlXGa1-XN (0≦X
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