Invention Grant
- Patent Title: Nonvolatile memory device and method of manufacturing the same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US12379277Application Date: 2009-02-18
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Publication No.: US08012789B2Publication Date: 2011-09-06
- Inventor: Han-Bong Ko , Yong-Ho Ha , Doo-Hwan Park , Bong-Jin Kuh , Hee-Ju Shin
- Applicant: Han-Bong Ko , Yong-Ho Ha , Doo-Hwan Park , Bong-Jin Kuh , Hee-Ju Shin
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2008-0014940 20080219
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A nonvolatile memory device, including a lower electrode on a semiconductor substrate, a phase change material pattern on the lower electrode, an adhesion pattern on the phase change material pattern and an upper electrode on the adhesion pattern, wherein the adhesion pattern includes a conductor including nitrogen.
Public/Granted literature
- US20090206318A1 Nonvolatile memory device and method of manufacturing the same Public/Granted day:2009-08-20
Information query
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