Invention Grant
US08012793B2 Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide
有权
包含硫族化物和过渡金属氧化物的非挥发性存储单元
- Patent Title: Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide
- Patent Title (中): 包含硫族化物和过渡金属氧化物的非挥发性存储单元
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Application No.: US12509889Application Date: 2009-07-27
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Publication No.: US08012793B2Publication Date: 2011-09-06
- Inventor: Chung Hon Lam , Gerhard Ingmar Meijer , Alejandro Gabriel Schrott
- Applicant: Chung Hon Lam , Gerhard Ingmar Meijer , Alejandro Gabriel Schrott
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/06
- IPC: H01L21/06
Abstract:
A memory cell for use in integrated circuits comprises a chalcogenide feature and a transition metal oxide feature. Both the chalcogenide feature and transition metal oxide feature each have at least two stable electrical resistance states. At least two bits of data can be concurrently stored in the memory cell by placing the chalcogenide feature into one of its stable electrical resistance states and by placing the transition metal oxide feature into one of its stable electrical resistance states.
Public/Granted literature
- US20090286350A1 Nonvolatile Memory Cell Comprising a Chalcogenide and a Transition Metal Oxide Public/Granted day:2009-11-19
Information query
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