Integrated micro-channels for 3D through silicon architectures

Invention Grant

US08012808B2 Integrated micro-channels for 3D through silicon architectures 有权

Title translation: 用于3D通过硅架构的集成微通道

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Patent Title: Integrated micro-channels for 3D through silicon architectures
Patent Title (中): 用于3D通过硅架构的集成微通道
Application No.: US12028090

Application Date: 2008-02-08
Publication No.: US08012808B2

Publication Date: 2011-09-06
Inventor: Wei Shi , Daoqiang Lu , Yiqun Bai , Qing A. Zhou , Jianqqi He
Applicant: Wei Shi , Daoqiang Lu , Yiqun Bai , Qing A. Zhou , Jianqqi He
Applicant Address: US CA Santa Clara
Assignee: Intel Corporation
Current Assignee: Intel Corporation
Current Assignee Address: US CA Santa Clara
Agent David L. Guglielmi
Main IPC: H01L21/00
IPC: H01L21/00

Integrated micro-channels for 3D through silicon architectures

Abstract:

Some embodiments of the present invention include apparatuses and methods relating to integrated micro-channels for removing heat from 3D through silicon architectures.

Abstract(Chinese):

本发明的一些实施例包括与通过硅架构从3D去除热量的集成微通道相关的装置和方法。

Public/Granted literature

US20090201643A1 INTEGRATED MICRO-CHANNELS FOR 3D THROUGH SILICON ARCHITECTURES Public/Granted day:2009-08-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备