Array substrate and method for fabricating thereof

Invention Grant

US08012815B2 Array substrate and method for fabricating thereof 有权

Title translation: 阵列基板及其制造方法

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Patent Title: Array substrate and method for fabricating thereof
Patent Title (中): 阵列基板及其制造方法
Application No.: US12837787

Application Date: 2010-07-16
Publication No.: US08012815B2

Publication Date: 2011-09-06
Inventor: Chih-Hung Shih , Ming-Yuan Huang , Chih-Chun Yang
Applicant: Chih-Hung Shih , Ming-Yuan Huang , Chih-Chun Yang
Applicant Address: TW Hsinchu
Assignee: Au Optronics Corp.
Current Assignee: Au Optronics Corp.
Current Assignee Address: TW Hsinchu
Agency: Thomas|Kayden
Priority: TW95126510A 20060720
Main IPC: H01L21/84
IPC: H01L21/84

Array substrate and method for fabricating thereof

Abstract:

The invention provides a method for manufacturing an array substrate utilizing a laser ablation process. A conductive layer can be selectively patterned by the laser ablation process without a photo mask due to different adhesions between the conductive layer and other materials. The patterned conductive layer thus formed adjoins an inorganic passivation layer to provide a substantially continuous surface.

Abstract(Chinese):

本发明提供一种使用激光烧蚀工艺制造阵列基板的方法。由于导电层和其它材料之间的不同粘附，可以通过激光烧蚀工艺来选择性地构图导电层，而不需要光掩膜。如此形成的图案化导电层与无机钝化层相邻以提供基本连续的表面。

Public/Granted literature

US20100285623A1 Array Substrate and Method for Fabricating Thereof Public/Granted day:2010-11-11

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体