Invention Grant
US08012816B2 Double pass formation of a deep quantum well in enhancement mode III-V devices
有权
在增强型III-V器件中双通道形成深量子阱
- Patent Title: Double pass formation of a deep quantum well in enhancement mode III-V devices
- Patent Title (中): 在增强型III-V器件中双通道形成深量子阱
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Application No.: US12347925Application Date: 2008-12-31
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Publication No.: US08012816B2Publication Date: 2011-09-06
- Inventor: Marko Radosavljevic , Benjamin Chu-Kung , Mantu K. Hudait , Ravi Pillarisetty
- Applicant: Marko Radosavljevic , Benjamin Chu-Kung , Mantu K. Hudait , Ravi Pillarisetty
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L21/3205 ; H01L21/4763
Abstract:
A quantum well is formed for a deep well III-V semiconductor device using double pass patterning. In one example, the well is formed by forming a first photolithography pattern over terminals on a material stack, etching a well between the terminals using the first photolithography patterning, removing the first photolithography pattern, forming a second photolithography pattern over the terminals and at least a portion of the well, deepening the well between the terminals by etching using the second photolithography pattern, removing the second photolithography pattern, and finishing the terminals and the well to form a device on the material stack.
Public/Granted literature
- US20100163849A1 DOUBLE PASS FORMATION OF A DEEP QUANTUM WELL IN ENHANCEMENT MODE III-V DEVICES Public/Granted day:2010-07-01
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